Everything has already been tested in the past.
Nowadays we can make smaller devices, we must investigate new solutions at 0.00013 millimeters (130nm).
130nm technology was discovered in 1984 and was generaly available in year 2000. You can submit your open source design to Open MPW and maybe get it built for free.
Electronic rectifiers and PNP transistors can be made out of Cuprous Oxide (Cu2O).
In 2020 Field Effect Transitor has been fabricated by a team in Slovakia using Cupric Oxide (CuO) by sol-gel method on a silicon substrate.
The substrate is a silicon wafer with 50nm silicon dioxide.
Copper (copper (II) acetate hydrate + ethanolamine) layer was deposited by spin-coating technic on the wafer and then annealed at 500°C for 1 hour to obtain cupric oxide.
50nm thick drain and source electrodes have been deposited by vacuum thermal evaporation of gold or aluminium.
The FET has a channel width of 2.5mm and a length of 100nm.
Homemade 1000+ transistor array chip
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Fabrication and characterization of CuO/ZnO solar cells
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Work function measurements on (100), (110) and (111) surfaces of aluminium
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Transistors theory and Applications
metallic rectifiers and crystal diodes
Transistors: A Self Instructional Programed Manual
handbook of semiconductor electronics
Industrial Electronics and Control
How to Build a Solar Cell That Really Works
Transistor Theory and Circuits Made Simple
Semiconductor Circuit Elements
The Science and Engineering of Microelectronic Fabrication
Introduction to Microelectronic Fabrication: Volume 5 (Modular Series on Solid State Devices)
Silicon VLSI Technology: Fundamentals, Practice and Modeling
CMOS: Circuit Design, Layout, and Simulation
Water-Soluble Copper Ink for the Inkjet Fabrication of Flexible Electronic Components
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Advanced Materials for Printed Flexible Electronics